2ED1324S12P 1200 V half-bridge gate driver IC with AMC (Active Miller Clamp), SCC (Short Circuit Clamp)

Overview

EiceDRIVER™ 1200 V half-bridge gate driver IC with 2.3 A source, 2.3 A sink current and cross conduction prevention in the sufficient creepage, clearance distance DSO-20 (300mils) package for 1200 V SiC MOSFET and IGBT power devices. The 2ED1324S12P supports Active Miller Clamp (AMC), Short Circuit Clamp (SCC) and Cross conduction prevention for the best in class switching performance in the sufficient creepage/clearance distance package DSO-20. Based on the used SOI-technology there is an excellent ruggedness on transient voltages. Since the device contains no parasitic thyristor structures, the design is very robust against parasitic latch up across the operating temperature and voltage range.

Summary of Features

  • Unique Infineon thin-film-Silicon On Insulator (SOI)-technology
  • Floating channel designed for bootstrap operation
  • Maximum bootstrap voltage (VB node) of + 1225 V
  • Operating voltages (VS node) upto + 1200 V
  • Negative VS transient voltage immunity of 100 V with repetitive 700 ns pulses
  • 2.3 A / 2.3 A peak output source / sink current capability
  • Integrated ultra-fast over-current protection (OCP)
  • ± 5% high accuracy reference threshold
  • Less than 1 us over-current sense to output shutdown
  • Integrated Active Miller Clamp (AMC) with 2 A sink current capability
  • Integrated Short Circuit Clamp (SCC) function
  • Integrated ultra-fast, low resistance bootstrap diode
  • Integrated dead-time and shoot-through prevention logic
  • Enable, Fault, and programmable Fault clear RFE input
  • Logic operational up to –8 V on VS Pin
  • Independent per channel undervoltage lockout (UVLO)
  • 25 V VCC supply voltage (maximum)
  • Separate Logic (VSS) and output ground (COM)
  • Greater than 5 mm clearance / creepage
  • 2 kV HBM ESD capability

Benefits

  • 1200 V High current capability (2.3 A/2.3 A) with Integrated bootstrap diode in tiny foot print provides reduced BOM cost, smaller PCB space at lower cost with simpler design
  • Optimized gate driver solution with design flexibility for 1200V IGBT/SiC based PIM, discrete switch
  • 100 V negative VS increased reliability / robustness
  • 50% lower level shift losses leads lower temperature operation and higher reliability
  • Active Miller Clamp supports very stable switching performance for whole power device, specially the low threshold one ; SiC etc.
  • Short Circuit Clamp removes gate voltage rise at short circuit situation
  • Latch-up immune increased reliability
  • Fast and accurate integrated over-current protection, provides space and cost savings compare to a discrete op-amp component solution while protecting the switches
  • Under-voltage lockout provides protection at low supply voltage
  • Wider Creepage and clearance distance in DSO-20 package
Diagrams
Training

Meet the EiceDRIVER™ 1200 V level-shift gate driver family

Our 1200 V level-shift gate driver family is a high-voltage, level-shift technology that provides unique, measurable, and best-in-class advantages, including an integrated bootstrap-diode and industry best-in-class robustness to protect against negative transient voltage spikes.

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